Precursors for metal organic chemical vapor deposition (MOCVD) of \(ZrO_{2}\) and \(HfO_{2}\) thin films as gate dielectrics in complementary metal-oxide-semiconductor (CMOS) devices

  • The thesis describes rational development of metalorganic precursors of Zr and Hf for the deposition of \(ZrO_{2}\) and \(HfO_{2}\) thin films by MOCVD. \(ZrO_{2}\) and \(HfO_{2}\) is an important material as an alternative gate dielectrics for \(SiO_{2}\) in microelectronics. The deposition of thin films by MOCVD has been established as a very useful fabrication process and requires volatile metalorganic precursors. Systematic variation in the ligand sphere of mixed \(\beta\)-diketonate/alkoxide type of complexes lead metalorganic precursors of Zr and Hf having excellent vaporisation characteristics and low decomposition temperatures, which showed promise for MOCVD of \(ZrO_{2}\) and \(HfO_{2}\) thin films. In this study, modified \(\beta\)-diketonate ligands namely \(\beta\)-ketoester and \(\beta\)-ketoamide as derivatives of the acac or the thd ligands has been employed. Using these complexes it was possible to grow \(ZrO_{2}\) and \(HfO_{2}\)$ thin films at low deposition temperatures.

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Metadaten
Author:Urmila PatilGND
URN:urn:nbn:de:hbz:294-13512
Referee:Roland A. FischerGND, Martin MuhlerORCiDGND
Document Type:Doctoral Thesis
Language:English
Date of Publication (online):2005/07/19
Date of first Publication:2005/07/19
Publishing Institution:Ruhr-Universität Bochum, Universitätsbibliothek
Granting Institution:Ruhr-Universität Bochum, Fakultät für Chemie und Biochemie
Date of final exam:2005/02/04
Creating Corporation:Fakultät für Chemie und Biochemie
GND-Keyword:MOCVD-Verfahren; Metallorganische Verbindungen: Thermoanalyse; Gate-Oxid; Dünne Schicht
Institutes/Facilities:Lehrstuhl für Anorganische Chemie II, Organometallics & Materials Chemistry
Dewey Decimal Classification:Naturwissenschaften und Mathematik / Chemie, Kristallographie, Mineralogie
faculties:Fakultät für Chemie und Biochemie
Licence (German):License LogoKeine Creative Commons Lizenz - es gelten der Veröffentlichungsvertrag und das deutsche Urheberrecht